Manufacturer Part Number
NTMFS4C03NT1G
Manufacturer
onsemi
Introduction
High power density N-channel MOSFET in a small 5x6mm DFN package
Product Features and Performance
Optimized for high frequency and high efficiency power conversion applications
Low on-resistance and fast switching speed
Capable of high continuous and pulsed current operation
Product Advantages
Compact 5x6mm DFN package
Low on-resistance for high efficiency
Fast switching for high frequency operation
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 2.1mΩ @ 30A, 10V
Continuous drain current (Id): 30A (Ta), 136A (Tc)
Input capacitance (Ciss): 3071pF @ 15V
Power dissipation: 3.1W (Ta), 64W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature operation up to 150°C
Compatibility
Surface mount 5-DFN (5x6) (8-SOFL) package
Tape and reel packaging
Application Areas
High frequency, high efficiency power conversion
Automotive electronics
Industrial power supplies
Telecom power systems
Product Lifecycle
Current active product, no discontinuation planned
Replacement or upgrade options available from manufacturer
Key Reasons to Choose
Compact package with high power density
Low on-resistance for high efficiency
Fast switching for high frequency operation
Capable of high continuous and pulsed current
Wide operating temperature range up to 150°C
