Manufacturer Part Number
NTMFS4C028NT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Designed for high-frequency and high-efficiency power conversion applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 30V
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) as low as 4.73mΩ @ 30A, 10V
Continuous drain current (Id) of 16.4A at 25°C (Ta), 52A at 100°C (Tc)
Input capacitance (Ciss) of 1252pF @ 15V
Power dissipation of 2.51W at 25°C (Ta), 25.5W at 100°C (Tc)
Gate charge (Qg) of 22.2nC @ 10V
Product Advantages
Excellent on-resistance performance for high-efficiency power conversion
High current handling capability
Low input capacitance for high-frequency operation
Compact 5-DFN (5x6) (8-SOFL) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.73mΩ @ 30A, 10V
Continuous drain current (Id): 16.4A (Ta), 52A (Tc)
Input capacitance (Ciss): 1252pF @ 15V
Power dissipation: 2.51W (Ta), 25.5W (Tc)
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for high-frequency and high-efficiency power conversion applications
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Telecommunications equipment
Industrial automation
Product Lifecycle
This product is an active and available component from onsemi.
Replacement or upgrade options may be available, but should be verified with onsemi.
Several Key Reasons to Choose This Product
Excellent on-resistance performance for high-efficiency power conversion
High current handling capability
Low input capacitance for high-frequency operation
Compact 5-DFN (5x6) (8-SOFL) package
RoHS3 compliant and wide operating temperature range
Suitable for a variety of high-frequency and high-efficiency power conversion applications