Manufacturer Part Number
NTMFS4C029NT1G
Manufacturer
onsemi
Introduction
This is a discrete semiconductor product, specifically a transistor FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor FET) single device.
Product Features and Performance
Operates in the temperature range of -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss) of 30V
Maximum Gate-Source Voltage (Vgs) of ±20V
Low On-State Resistance (Rds On) of 5.88mOhm @ 30A, 10V
Continuous Drain Current (Id) of 15A (Ta), 46A (Tc)
Input Capacitance (Ciss) of 987pF @ 15V
Maximum Power Dissipation of 2.49W (Ta), 23.6W (Tc)
N-Channel FET Type
Gate Threshold Voltage (Vgs(th)) of 2.2V @ 250A
Drive Voltage Range of 4.5V (Max Rds On) to 10V (Min Rds On)
Maximum Gate Charge (Qg) of 18.6nC @ 10V
Product Advantages
High current handling capability
Low on-state resistance for improved efficiency
Wide temperature range operation
Suitable for various power management and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds On): 5.88mOhm
Continuous Drain Current (Id): 15A (Ta), 46A (Tc)
Input Capacitance (Ciss): 987pF
Power Dissipation: 2.49W (Ta), 23.6W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface mount package (5-DFN, 8-SOFL)
Tape and Reel (TR) packaging
Application Areas
Power management
Motor control
Switching power supplies
Industrial control
Automotive electronics
Product Lifecycle
Current production, no indication of discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High current handling capability for demanding applications
Low on-state resistance for improved energy efficiency
Wide operating temperature range for versatile use
Robust package and RoHS compliance for quality and safety
Compatibility with common surface mount assembly processes
