NTLJF4156NTAG - onsemi

Manufacturer Part Number

NTLJF4156NTAG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

RoHS3 Compliant

6-WDFN (2x2) package

Operating Temperature: -55°C to 150°C

Drain to Source Voltage (Vdss): 30V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id) @ 25°C: 2.5A

Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15V

Schottky Diode (Isolated)

Power Dissipation (Max): 710mW

N-Channel FET Type

Vgs(th) (Max) @ Id: 1V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5V

Surface Mount Mounting Type

Product Advantages

Compact 6-WDFN (2x2) package

Wide operating temperature range

Low on-resistance

Robust Schottky diode

Efficient power handling

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Vgs (Max): ±8V

Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V

Continuous Drain Current (Id) @ 25°C: 2.5A

Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15V

Power Dissipation (Max): 710mW

Quality and Safety Features

RoHS3 Compliant

Robust Schottky diode

Compatibility

Surface Mount

Application Areas

Power management

Switching circuits

Motor control

Industrial electronics

Product Lifecycle

Currently in production, with no immediate discontinuation plans. Replacement or upgrade options may be available.

Key Reasons to Choose This Product

Compact 6-WDFN (2x2) package

Wide operating temperature range of -55°C to 150°C

Low on-resistance of 70mOhm

Robust Schottky diode for efficient power handling

RoHS3 compliant for environmental compliance