NTLJD4116NT1G - onsemi

Manufacturer Part Number

NTLJD4116NT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistor FET, MOSFET Array

Product Features and Performance

2 N-Channel (Dual) MOSFET

Drain to Source Voltage (Vdss): 30V

RDS(on) (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V

Continuous Drain Current (Id) @ 25°C: 2.5A

Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V

Logic Level Gate

Vgs(th) (Max) @ Id: 1V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V

Product Advantages

Suitable for high-power switching and amplification applications

Excellent thermal management due to 6-WDFN Exposed Pad package

Robust and reliable performance across wide temperature range (-55°C to 150°C)

Key Technical Parameters

Package: 6-WDFN (2x2) Exposed Pad

Power Max: 710mW

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

High-power switching and amplification circuits

Power management systems

Motor control

Industrial and consumer electronics

Product Lifecycle

Currently available

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance and reliability in high-power applications

Compact and thermally efficient package

Broad operating temperature range

RoHS3 compliance for environmentally-friendly design