NTDV3055L104T4G - onsemi

Manufacturer Part Number

NTDV3055L104T4G

Manufacturer

onsemi

Introduction

This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - single device.

Product Features and Performance

MOSFET (Metal Oxide) technology

N-Channel FET type

60V drain to source voltage (Vdss)

±15V maximum gate to source voltage (Vgs)

104mOhm maximum on-resistance (Rds On) at 6A, 5V

12A maximum continuous drain current (Id) at 25°C

440pF maximum input capacitance (Ciss) at 25V

5W maximum power dissipation at 25°C

20nC maximum gate charge (Qg) at 5V

-55°C to 175°C operating temperature range

Product Advantages

Automotive and AEC-Q101 qualified

Surface mount DPAK package

RoHS3 compliant

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs): ±15V

On-Resistance (Rds On): 104mOhm @ 6A, 5V

Continuous Drain Current (Id): 12A @ 25°C

Input Capacitance (Ciss): 440pF @ 25V

Power Dissipation (Max): 1.5W @ 25°C

Gate Charge (Qg): 20nC @ 5V

Quality and Safety Features

RoHS3 compliant

Automotive and AEC-Q101 qualified

Compatibility

Surface mount DPAK package

Application Areas

Suitable for automotive and industrial applications requiring high voltage, high current, and high temperature operation.

Product Lifecycle

This product is currently in production and available.

Key Reasons to Choose This Product

Automotive and industrial grade quality and performance

Wide operating temperature range of -55°C to 175°C

Low on-resistance and high current handling capability

Small surface mount DPAK package

RoHS3 compliance for environmental friendliness