Manufacturer Part Number
NTDV20P06LT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single MOSFET Transistor
Product Features and Performance
P-Channel MOSFET Transistor
60V Drain to Source Voltage
-55°C to 175°C Operating Temperature Range
5A Continuous Drain Current at 25°C
150mΩ Maximum On-State Resistance at 7.5A, 5V
1190pF Maximum Input Capacitance at 25V
65W Power Dissipation Capability
26nC Maximum Gate Charge at 5V
Product Advantages
Efficient power switching performance
Wide operating temperature range
Low on-state resistance for low power loss
Compact DPAK surface mount package
Key Technical Parameters
Drain to Source Voltage: 60V
Gate to Source Voltage: ±20V
On-State Resistance: 150mΩ
Continuous Drain Current: 15.5A
Input Capacitance: 1190pF
Power Dissipation: 65W
Quality and Safety Features
RoHS3 compliant
DPAK package for surface mount
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for power switching, control, and conversion applications
Applicable in power supplies, motor drives, lighting, and other power electronics
Product Lifecycle
This product is an active and available part
No known plans for discontinuation
Replacement or upgraded options may become available in the future
Key Reasons to Choose
Excellent power handling and efficiency
Wide operating temperature range
Compact and reliable DPAK package
RoHS compliance for environmental friendliness
