Manufacturer Part Number
NTDV20N06LT4G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
60V Drain-to-Source Voltage
20A Continuous Drain Current
48mΩ On-Resistance
990pF Input Capacitance
32nC Gate Charge
-55°C to 175°C Operating Temperature Range
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Compact DPAK surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±15V
Drain Current (Id): 20A
On-Resistance (Rds(on)): 48mΩ
Input Capacitance (Ciss): 990pF
Power Dissipation: 1.36W (Ta), 60W (Tj)
Quality and Safety Features
MOSFET technology for reliable performance
Wide operating temperature range
Compatibility
Surface mount DPAK package
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial controls
Product Lifecycle
Current product, no discontinuation plans identified
Replacements and upgrades available as technology advances
Key Reasons to Choose This Product
High power handling and efficiency
Compact surface mount package
Wide temperature range for industrial applications
Reliable MOSFET technology
Availability of replacements and upgrades