Manufacturer Part Number
NTD5865NLT4G
Manufacturer
onsemi
Introduction
The NTD5865NLT4G is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
RoHS3 Compliant
DPAK packaging
Operating Temperature Range: -55°C to 175°C (TJ)
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-state Resistance (Rds(on)): 16mOhm @ 20A, 10V
Continuous Drain Current (Id) @ 25°C: 46A (Tc)
Maximum Input Capacitance (Ciss): 1400pF @ 25V
Maximum Power Dissipation: 71W (Tc)
N-Channel MOSFET
Maximum Threshold Voltage (Vgs(th)): 2V @ 250A
Drive Voltage Range: 4.5V to 10V
Maximum Gate Charge (Qg): 29nC @ 10V
Product Advantages
High current handling capability
Low on-state resistance
Wide operating temperature range
Compact DPAK packaging
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 16mOhm
Continuous Drain Current (Id): 46A
Input Capacitance (Ciss): 1400pF
Power Dissipation: 71W
Threshold Voltage (Vgs(th)): 2V
Gate Charge (Qg): 29nC
Quality and Safety Features
RoHS3 Compliant
DPAK packaging for reliable surface mount assembly
Compatibility
Surface mount device
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Switching circuits
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High current handling capability for demanding applications
Low on-state resistance for improved efficiency
Wide operating temperature range for diverse environments
Compact DPAK packaging for space-constrained designs
RoHS3 compliance for environmental responsibility
Surface mount and tape and reel packaging for automated assembly
NTD5862NT4G 5862NGAMI Semiconductor/onsemi