Manufacturer Part Number
NTD5862NT4G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET for high-power applications
Product Features and Performance
Extremely low on-resistance
High current capability
Fast switching speed
Suitable for high-frequency switching applications
Excellent thermal performance
Product Advantages
Minimizes conduction losses
Enables high-efficiency power conversion
Allows for compact and lightweight design
Provides reliable and robust operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 5.7mΩ @ 45A, 10V
Continuous Drain Current (Id): 98A @ 25°C (Tc)
Input Capacitance (Ciss): 6000pF @ 25V
Power Dissipation (Pd): 115W (Tc)
Quality and Safety Features
Robust MOSFET design
Excellent thermal performance
Compliant with industry standards
Compatibility
Suitable for a wide range of high-power applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Converters
Application Areas
Industrial equipment
Automotive electronics
Renewable energy systems
Power management systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from onsemi
Several Key Reasons to Choose This Product
Exceptionally low on-resistance for high efficiency
High current capability for demanding applications
Fast switching speed for high-frequency operation
Robust design and excellent thermal performance for reliable operation
Compatibility with a wide range of high-power applications
NTD5806NAMI Semiconductor/onsemi
NTD5865NL-1GonsemiMOSFET N-CH 60V 46A IPAK