Manufacturer Part Number
NTD5806NT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Designed for high-efficiency power conversion and control applications
Product Features and Performance
Wide operating temperature range of -55°C to 175°C
Low on-state resistance (RDS(ON)) of 19 mΩ at 15A, 10V
High current capacity of 33A continuous drain current at 25°C
Low input capacitance (Ciss) of 860 pF at 25V
Efficient power handling with a max power dissipation of 40W at 25°C
Product Advantages
Excellent thermal management and power efficiency
Suitable for high-power switching and control applications
Reliable operation across a wide temperature range
Key Technical Parameters
Drain-source voltage (VDS): 40V
Gate-source voltage (VGS): ±20V
Threshold voltage (VGS(th)): 2.5V at 250A
Drive voltage range: 4.5V to 10V
Quality and Safety Features
Robust MOSFET design for reliable performance
Suitable for industrial, automotive, and other high-reliability applications
Compatibility
Compatible with various power conversion and control circuits
Application Areas
High-efficiency power supplies
Motor drives and industrial controls
Automotive electronics and power management
Product Lifecycle
Current active product, no discontinuation planned
Replacement and upgrade options available as needed
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
High current capacity and low on-state resistance
Wide temperature range for versatile applications
Reliable and robust design for industrial and automotive use
Compatibility with various power conversion and control circuits