Manufacturer Part Number
NTD5867NLT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Designed for power switching and amplification applications
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low on-resistance: 39 mΩ @ 10 A, 10 V
High drain current capacity: 20 A continuous @ 25°C
Low input capacitance: 675 pF @ 25 V
High power dissipation: 36 W
Product Advantages
Excellent power handling and efficiency
Robust and reliable design
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Gate-to-Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.5 V @ 250 A
Gate Charge (Qg): 15 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient heat dissipation
Compatibility
Suitable for surface mount applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
Current production, no known discontinuation plans
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable design
Wide operating temperature range
Efficient surface mount package
Suitable for a wide range of power electronics applications
NTD5865NLGAMI Semiconductor/onsemi