Manufacturer Part Number
NTD18N06T4G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Product Features and Performance
Operating temperature range: -55°C to 175°C
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs) max: ±20V
On-state resistance (Rds(on)) max: 60mΩ @ 9A, 10V
Continuous drain current (Id) @ 25°C: 18A
Input capacitance (Ciss) max: 710pF @ 25V
Power dissipation max: 2.1W (Ta), 55W (Tj)
Product Advantages
Low on-state resistance for low power loss
High current handling capability
Suitable for high-frequency and high-power switching applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET type: N-Channel
Threshold voltage (Vgs(th)) max: 4V @ 250A
Drive voltage (max Rds(on), min Rds(on)): 10V
Gate charge (Qg) max: 30nC @ 10V
Quality and Safety Features
Complies with industrial standards for reliability and safety
Compatibility
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor control
Inverters
Power management circuits
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent performance in high-power, high-frequency switching applications
Reliable and safe operation across a wide temperature range
Low on-state resistance for improved efficiency
High current handling capability