Manufacturer Part Number
NTD18N06LT4G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Product Features and Performance
60V drain-to-source voltage
18A continuous drain current
65mΩ on-resistance
-55°C to 175°C operating temperature range
Low gate charge of 22nC
Fast switching speed
Product Advantages
Efficient power conversion
Reliable performance in high-temperature environments
Compact TO-252-3 (DPAK) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±15V
On-resistance (Rds(on)): 65mΩ @ 9A, 5V
Continuous drain current (Id): 18A @ 25°C
Input capacitance (Ciss): 675pF @ 25V
Power dissipation: 2.1W @ 25°C, 55W @ 175°C
Threshold voltage (Vgs(th)): 2V @ 250μA
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power management circuits
Product Lifecycle
Currently in production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Reliable performance in high-temperature environments
Compact and space-saving DPAK package
Suitable for a variety of power electronics and control applications