Manufacturer Part Number
NTD18N06LG
Manufacturer
onsemi
Introduction
The NTD18N06LG is a discrete N-channel MOSFET transistor device.
Product Features and Performance
60V drain-source voltage rating
-55°C to 175°C operating temperature range
18A continuous drain current at 25°C
65mΩ maximum on-resistance at 9A, 5V gate-source voltage
675pF maximum input capacitance at 25V drain-source voltage
22nC maximum gate charge at 5V gate-source voltage
1W maximum power dissipation at 25°C, 55W at 175°C junction temperature
Product Advantages
Suitable for high-power switching and amplification applications
Excellent on-resistance and switching performance
Robust design for high-temperature operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±15V
On-Resistance (Rds(on)): 65mΩ
Continuous Drain Current (Id): 18A
Input Capacitance (Ciss): 675pF
Power Dissipation: 2.1W (Ta), 55W (Tj)
Quality and Safety Features
MOSFET technology for high reliability
Designed for safe and efficient operation
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
High-power switching applications
Amplifier circuits
Motor control
Power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High-performance MOSFET with excellent on-resistance and switching characteristics
Wide operating temperature range for robust and reliable operation
Suitable for a variety of high-power switching and amplification applications
Proven onsemi quality and reliability
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