NTB004N10G - onsemi

Manufacturer Part Number

NTB004N10G

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET suitable for switching and amplifier applications

Product Features and Performance

High current capability up to 201A continuous drain current at 25°C

Low on-resistance of 4.2mΩ @ 100A, 10V

High voltage rating of 100V drain-to-source

Wide operating temperature range of -55°C to 175°C

Fast switching speed

High power dissipation of 340W at 25°C case temperature

Product Advantages

Excellent thermal performance and power handling

Reliable and robust design for demanding applications

Suitable for high-current, high-voltage switching and amplifier circuits

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 4.2mΩ @ 100A, 10V

Continuous Drain Current (Id): 201A at 25°C

Input Capacitance (Ciss): 11900pF @ 50V

Power Dissipation (Pd): 340W at 25°C case temperature

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a variety of power electronics and industrial applications

Application Areas

Switching power supplies

Motor drives

Inverters

Welding equipment

Industrial automation and control systems

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High current capability and low on-resistance for efficient power conversion

Robust design for reliable operation in demanding environments

Wide temperature range for versatile applications

Excellent thermal performance and power handling

Proven quality and safety features for industrial and commercial use