Manufacturer Part Number
NTB110N65S3HF
Manufacturer
onsemi
Introduction
High performance N-channel power MOSFET transistor designed for high voltage, high frequency switching applications
Product Features and Performance
High voltage capability up to 650V
Low on-resistance (RDS(on)) of 110mΩ
High continuous drain current of 30A
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 2635pF
High power dissipation of 240W
Product Advantages
Excellent power handling and efficiency
Reliable performance in high voltage, high frequency applications
Compact DPAK-3 (TO-263-3) surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Maximum Gate-Source Voltage (Vgs): ±30V
On-resistance (RDS(on)): 110mΩ @ 15A, 10V
Continuous Drain Current (ID): 30A
Input Capacitance (Ciss): 2635pF @ 400V
Power Dissipation (Tc): 240W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Compatible with high voltage, high frequency power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable performance in high voltage, high frequency applications
Compact surface mount package
Wide operating temperature range
RoHS3 compliance for environmental responsibility