NTB082N65S3F - onsemi

Manufacturer Part Number

NTB082N65S3F

Manufacturer

onsemi

Introduction

The NTB082N65S3F is a high-performance N-channel power MOSFET from onsemi, designed for a wide range of power management and conversion applications.

Product Features and Performance

650V drain-to-source voltage rating

Low on-resistance of 82mΩ @ 20A, 10V

High current capability of 40A continuous drain current

Fast switching speed and low gate charge of 81nC @ 10V

Wide operating temperature range of -55°C to 150°C

Rugged design and excellent reliability

Product Advantages

Excellent power efficiency and thermal performance

Reduced power losses and improved system reliability

Suitable for high-voltage, high-power applications

Compact DPAK (TO-263) surface-mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Maximum Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 82mΩ @ 20A, 10V

Continuous Drain Current (Id): 40A @ 25°C

Input Capacitance (Ciss): 3410pF @ 400V

Power Dissipation (Pd): 313W @ Tc

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Robust design and high reliability

Compatibility

Suitable for a wide range of power electronics applications, including power supplies, motor drives, and industrial equipment

Application Areas

Switch-mode power supplies

Inverters and converters

Motor drives

Industrial automation and control

Product Lifecycle

This product is currently in active production and widely available.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High efficiency and low power losses for improved system performance

Robust and reliable design for long-term operation

Wide voltage and current capabilities for versatile applications

Compact surface-mount package for space-constrained designs

Excellent thermal management and thermal stability