Manufacturer Part Number
NTA4153NT1G
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Designed for power management and control applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 20V
Maximum gate-to-source voltage (Vgs) of ±6V
On-resistance (Rds(on)) of 230mΩ at 600mA, 4.5V
Continuous drain current (Id) of 915mA at 25°C
Input capacitance (Ciss) of 110pF at 16V
Power dissipation (Ptot) of 300mW
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact surface-mount package
Key Technical Parameters
MOSFET technology
N-channel configuration
Threshold voltage (Vgs(th)) of 1.1V at 250μA
Drive voltage range of 1.5V to 4.5V
Gate charge (Qg) of 1.82nC at 4.5V
Quality and Safety Features
RoHS3 compliant
Operated within a temperature range of -55°C to 150°C
Compatibility
Suitable for surface-mount applications
Available in SC-75 and SOT-416 packages
Application Areas
Power management circuits
Motor control
Switching power supplies
General purpose power control
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Compact surface-mount packaging
Suitable for a wide range of power management and control applications
Reliable operation within a wide temperature range
RoHS3 compliance for environmental responsibility