Manufacturer Part Number
NTA4001NT1G
Manufacturer
onsemi
Introduction
The NTA4001NT1G is a discrete semiconductor product classified as a single N-Channel MOSFET transistor.
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Supports a maximum drain to source voltage (Vdss) of 20V
Features a maximum gate-to-source voltage (Vgs) of ±10V
Exhibits a maximum on-state resistance (Rds(on)) of 3Ω at 10mA, 4.5V
Offers a continuous drain current (Id) of 238mA at 25°C
Has a maximum input capacitance (Ciss) of 20pF at 5V
Dissipates up to 300mW of power at the maximum junction temperature
Utilizes MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Configured as an N-Channel FET type
Supports a gate threshold voltage (Vgs(th)) of 1.5V at 100μA
Product Advantages
Wide operating temperature range
Low on-state resistance for efficient switching
High current handling capability
Compact surface mount package options
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate to Source Voltage (Vgs): ±10V
On-State Resistance (Rds(on)): 3Ω @ 10mA, 4.5V
Continuous Drain Current (Id): 238mA @ 25°C
Input Capacitance (Ciss): 20pF @ 5V
Power Dissipation: 300mW (Tj)
Gate Threshold Voltage (Vgs(th)): 1.5V @ 100μA
Quality and Safety Features
RoHS3 compliant
Suitable for use in a variety of applications
Compatibility
Compact surface mount packaging (SC-75, SOT-416)
Available in Tape and Reel (TR) format
Application Areas
Suitable for use in a wide range of electronic circuits and systems that require efficient switching and power control
Product Lifecycle
Current production status, no indication of discontinuation
Replacements or upgrades may be available in the future
Key Reasons to Choose
Wide operating temperature range for robust performance
Low on-state resistance for efficient power handling
High current capability for demanding applications
Compact surface mount package options for space-constrained designs
RoHS3 compliance for environmentally friendly use