Manufacturer Part Number
NTA4151PT1G
Manufacturer
onsemi
Introduction
P-channel MOSFET transistor
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±6V Gate-Source Voltage (Vgs)
360mΩ On-State Resistance (Rds(on)) at 350mA, 4.5V
760mA Continuous Drain Current (ID) at 25°C
156pF Input Capacitance (Ciss) at 5V
301mW Power Dissipation (PD) at Tj
Product Advantages
MOSFET technology offering high efficiency and fast switching
Suitable for power management and control applications
Low on-state resistance for low power loss
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET technology
P-channel FET type
20V Drain-Source Voltage
±6V Gate-Source Voltage
360mΩ On-State Resistance
760mA Continuous Drain Current
Quality and Safety Features
RoHS3 compliant
SC-75, SOT-416 package
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power management
Control circuits
Switching applications
Product Lifecycle
Current production status
Replacements or upgrades may be available
Key Reasons to Choose
High efficiency MOSFET technology
Low on-state resistance for low power loss
Wide operating temperature range
Small surface mount package