NSBA114EDP6T5G - onsemi

Manufacturer Part Number

NSBA114EDP6T5G

Manufacturer

onsemi

Introduction

The NSBA114EDP6T5G is a pre-biased bipolar junction transistor (BJT) array in a SOT-963 surface mount package.

Product Features and Performance

Dual PNP transistors in a single package

Pre-biased configuration with integrated base resistors

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

Suitable for small-signal amplification and switching applications

Product Advantages

Compact surface mount package

Pre-biased design simplifies circuit implementation

Optimized for low-power, low-voltage applications

Robust performance characteristics

Key Technical Parameters

Power Rating: 338mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 10mA

DC Current Gain: 35 min @ 5mA, 10V

Base Resistance: 10kOhms

Emitter-Base Resistance: 10kOhms

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package

Compatibility

Can be used in a variety of small-signal amplifier and switching circuit designs

Application Areas

Small-signal amplification

Switching applications

Low-power electronic circuits

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may be available in the future, but the specific details are unknown at this time.

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Optimized for low-power, low-voltage applications

Robust performance characteristics in a compact surface mount package

RoHS3 compliance for environmental responsibility

Reliable and compatible for a variety of circuit designs