NSBA114YDXV6T1G - onsemi

Manufacturer Part Number

NSBA114YDXV6T1G

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically a Bipolar Junction Transistor (BJT) array with pre-biased transistors.

Product Features and Performance

Dual PNP pre-biased transistors

Operates at a maximum power of 500mW

Collector-emitter breakdown voltage up to 50V

Collector current up to 100mA

Collector cutoff current up to 500nA

Saturation voltage as low as 250mV @ 10mA collector current

Current gain (hFE) of at least 80 @ 5mA collector current, 10V collector-emitter voltage

Base resistor of 10kΩ

Emitter-base resistor of 47kΩ

Product Advantages

Pre-biased transistors simplify circuit design

Small surface mount package (SOT-563, SOT-666)

Reliable and robust performance

Key Technical Parameters

Power Rating: 500mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current: 100mA

Collector Cutoff Current: 500nA

Saturation Voltage: 250mV @ 10mA

Current Gain (hFE): 80 min @ 5mA, 10V

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Surface mount (SMT) assembly

Application Areas

General-purpose amplification and switching circuits

Power management applications

Analog and digital circuit designs

Product Lifecycle

Current production model, no indication of discontinuation

Key Reasons to Choose This Product

Proven reliability and performance

Compact surface mount package

Simplified circuit design with pre-biased transistors

Robust electrical characteristics

RoHS3 compliance for environmental reliability