Manufacturer Part Number
NSB1706DMW5T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Arrays, Pre-Biased
Product Features and Performance
RoHS3 Compliant
5-TSSOP, SC-70-5, SOT-353 Package
Power Rating: 187mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 500nA
VCE Saturation Voltage: 250mV @ 1mA, 10mA
Transistor Type: 2 NPN Pre-Biased (Dual)
DC Current Gain (hFE): 80 Min @ 5mA, 10V
Base Resistor: 4.7kOhms
Emitter-Base Resistor: 47kOhms
Surface Mount Mounting
Product Advantages
Pre-Biased transistor array for simplified circuit design
Compact surface mount package
Low power consumption
High breakdown voltage
Key Technical Parameters
Power Rating: 187mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
DC Current Gain (hFE): 80 Min
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for various electronic circuit applications
Application Areas
Amplifiers
Switching circuits
Logic gates
Biasing networks
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Pre-biased transistor array for simplified circuit design
Compact surface mount package
Low power consumption
High breakdown voltage
RoHS3 Compliant