Manufacturer Part Number
NJD35N04T4G
Manufacturer
onsemi
Introduction
NPN Darlington transistor
Designed for high-power switching and amplifier applications
Product Features and Performance
High collector-emitter breakdown voltage: 350V
High collector current: 4A
High DC current gain: 2000 @ 2A, 2V
High frequency transition: 90MHz
Low collector-emitter saturation voltage: 1.5V @ 20mA, 2A
Wide operating temperature range: -65°C to 150°C
Product Advantages
Efficient power switching and amplification
Reliable high-voltage and high-current operation
Suitable for various high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 350V
Collector Current (Max): 4A
DC Current Gain: 2000 @ 2A, 2V
Transition Frequency: 90MHz
Collector-Emitter Saturation Voltage: 1.5V @ 20mA, 2A
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient heat dissipation
Compatibility
Surface mount package (TO-252-3, DPak)
Compatible with various high-power circuit designs
Application Areas
High-power switching circuits
Amplifier circuits
Motor control
Power supplies
Industrial equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement/upgrade parts available if needed
Several Key Reasons to Choose This Product
Exceptional high-voltage and high-current capabilities
Excellent frequency performance for high-speed applications
Reliable and efficient power switching and amplification
Wide operating temperature range for harsh environments
RoHS3 compliant for environmental safety