NJD2873T4G - onsemi

Manufacturer Part Number

NJD2873T4G

Manufacturer

onsemi

Introduction

High-voltage, high-current NPN transistor in a DPAK package

Product Features and Performance

50V collector-emitter breakdown voltage

2A collector current rating

65MHz transition frequency

300mV Vce saturation voltage at 1A collector current

120 minimum DC current gain at 500mA collector current

Product Advantages

Robust and reliable performance

Compact DPAK package for space-constrained designs

Suitable for high-power switching and amplification applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 2A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V

Frequency Transition: 65MHz

Quality and Safety Features

RoHS3 compliant

Tested and qualified for reliable operation from -65°C to 175°C

Compatibility

Surface mount DPAK package

Suitable for tape and reel packaging and automated assembly

Application Areas

High-power switching and amplification circuits

Industrial, automotive, and consumer electronics applications

Product Lifecycle

Current and actively supported product

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Robust and reliable high-power performance

Compact DPAK package for space-constrained designs

Suitable for a wide range of high-power switching and amplification applications

Extensive temperature range and RoHS3 compliance for broad applicability