Manufacturer Part Number
NJD2873T4
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
15 W Power Rating
50 V Collector-Emitter Breakdown Voltage
2 A Collector Current
300 mV Collector-Emitter Saturation Voltage @ 50 mA, 1 A
120 DC Current Gain @ 500 mA, 2 V
65 MHz Transition Frequency
Product Advantages
High power handling capability
High voltage and current ratings
Low saturation voltage for efficient operation
Good current gain and high-speed switching
Key Technical Parameters
Power Rating: 15 W
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 2 A
Collector-Emitter Saturation Voltage: 300 mV @ 50 mA, 1 A
DC Current Gain: 120 @ 500 mA, 2 V
Transition Frequency: 65 MHz
Quality and Safety Features
RoHS non-compliant
Surface mount DPAK package
Compatibility
Compatible with various electronic circuits and systems that require a high-power, high-voltage, and high-speed NPN bipolar junction transistor
Application Areas
Power amplifiers
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
No information available on discontinuation or replacements
Key Reasons to Choose This Product
High power handling capability
Excellent voltage and current ratings
Low saturation voltage for efficient operation
Good current gain and high-speed switching performance
Suitable for a wide range of power electronics and industrial applications