Manufacturer Part Number
NDS352AP
Manufacturer
onsemi
Introduction
P-channel enhancement mode MOSFET
Suitable for power management, switching, and amplifier applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 30V
Maximum Gate-to-Source Voltage (Vgs) of ±20V
Low On-Resistance (Rds(on)) of 300mΩ @ 1A, 10V
Continuous Drain Current (Id) of 900mA @ 25°C
Input Capacitance (Ciss) of 135pF @ 15V
Power Dissipation (Pd) of 500mW @ 25°C
Product Advantages
Excellent power efficiency due to low on-resistance
Wide operating temperature range of -55°C to 150°C
Small surface mount SOT-23-3 package
Key Technical Parameters
MOSFET Technology: P-Channel enhancement mode
Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Drive Voltage Range: 4.5V to 10V
Gate Charge (Qg): 3nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with a wide range of power management, switching, and amplifier circuits
Application Areas
Power management
Switching circuits
Amplifier circuits
Product Lifecycle
Currently in active production
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance for improved system performance
Wide operating temperature range for reliable operation in diverse environments
Small surface mount package for space-constrained applications
RoHS3 compliance and AEC-Q101 qualification for use in automotive and industrial applications