Manufacturer Part Number
NDS352AP
Manufacturer
Fairchild (onsemi)
Introduction
The NDS352AP is a P-channel enhancement-mode MOSFET transistor.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
Maximum on-resistance (Rds(on)): 300mΩ @ 1A, 10V
Continuous drain current (Id): 900mA
Input capacitance (Ciss): 135pF @ 15V
Maximum power dissipation: 500mW
Product Advantages
Low on-resistance for low power loss
High input impedance for easy driving
Wide operating temperature range
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET type: P-Channel
Threshold voltage (Vgs(th)): 2.5V @ 250μA
Drive voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate charge (Qg): 3nC @ 4.5V
Quality and Safety Features
Qualified for automotive and industrial applications
RoHS-compliant
Compatibility
Surface mount package: SuperSOT-3 (TO-236-3, SC-59, SOT-23-3)
Application Areas
Power management
Switching circuits
Amplifiers
Motor controls
Product Lifecycle
This product is currently in production and available from the manufacturer.
Several Key Reasons to Choose This Product
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact surface mount package for space-constrained designs
Automotive and industrial grade quality and reliability