Manufacturer Part Number
NDS355AN
Manufacturer
onsemi
Introduction
The NDS355AN is a N-Channel MOSFET transistor designed for general-purpose switching and amplification applications.
Product Features and Performance
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
85mΩ On-Resistance (Rds(on)) at 1.9A, 10V
7A Continuous Drain Current (Id) at 25°C
195pF Input Capacitance (Ciss) at 15V
500mW Power Dissipation (Pd) at 25°C
Fast switching speed and low on-resistance
Product Advantages
Efficient power conversion with low on-resistance
Suitable for general-purpose switching and amplification applications
Compact SOT-23-3 surface-mount package
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
2V Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
5nC Gate Charge (Qg) at 5V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Compatible with standard MOSFET footprints and drivers
Application Areas
General-purpose switching and amplification
Power management circuits
Telecommunications equipment
Industrial automation and control
Product Lifecycle
Current production status, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Compact and reliable SOT-23-3 package
Wide operating temperature range
Suitable for a variety of general-purpose applications
Availability of replacement and upgrade options