Manufacturer Part Number
NCP81080DR2G
Manufacturer
onsemi
Introduction
The NCP81080DR2G is a Synchronous Half-Bridge N-Channel MOSFET Gate Driver.
Product Features and Performance
Dual-channel driver for N-Channel MOSFETs
TTL-compatible input thresholds
Robust 500mA/800mA peak source/sink current capability
Fast switching with 19ns rise and 17ns fall time
Wide operating voltage range 5.5V to 20V
Operating at temperature extremes from -40°C to 140°C
Product Advantages
Highly efficient power management for compact applications
Capable of driving high-frequency power MOSFETs
Stable operation under extreme temperature conditions
Key Technical Parameters
Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 5.5V ~ 20V
Logic Voltage - VIL, VIH: 1.2V, 1.8V
Current - Peak Output: 500mA Source, 800mA Sink
Input Type: TTL
Rise / Fall Time: 19ns / 17ns
Operating Temperature Range: -40°C to 140°C
Quality and Safety Features
Designed to ensure stable performance in challenging environments
Compatibility
Suitable for use in applications with TTL logic levels
Application Areas
Power management and control in computing, consumer electronics, and industrial equipment
Product Lifecycle
Status: Last Time Buy
Availability of replacements or upgrades to be checked with onsemi
Several Key Reasons to Choose This Product
Ideal for high-frequency power MOSFET driving
Supports high-temperature operations for robust performance
High current capability for handling demanding applications
TTL compatibility simplifies integration with existing logic levels
Fast switching times improve efficiency and reduce power loss
Available in a compact 8-SOIC package, saving valuable board space