NCP81075DR2G - onsemi

Manufacturer Part Number

NCP81075DR2G

Manufacturer

onsemi

Introduction

The NCP81075DR2G is a gate driver optimized for controlling N-Channel MOSFETs used in various power management applications.

Product Features and Performance

Driven Configuration: High-Side or Low-Side

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage Supply: 8.5V ~ 20V

Logic Voltage VIL, VIH: 0.8V, 2.7V

Current Peak Output (Source, Sink): 4A, 4A

Input Type: Non-Inverting

High Side Voltage Max (Bootstrap): 200 V

Rise / Fall Time (Typ): 8ns, 7ns

Operating Temperature: -40°C ~ 140°C (TJ)

Mounting Type: Surface Mount

Package / Case: 8-SOIC (0.154", 3.90mm Width)

Product Advantages

Dual independent driver channels enhance system flexibility.

High peak output current of up to 4A, suitable for driving large capacity MOSFETs.

Wide supply voltage range (8.5V to 20V) accommodates various application requirements.

High bootstrap voltage capability (up to 200V) allows for high-side switching applications.

Key Technical Parameters

Supply Voltage: 8.5V ~ 20V

Output Current (Peak): 4A (Source), 4A (Sink)

High Side Voltage (Max): 200V

Operating Temperature: -40°C ~ 140°C

Rise Time: 8ns

Fall Time: 7ns

Quality and Safety Features

Robust operating temperature range ensures reliability in harsh environments.

Compatibility

Compatible with N-Channel MOSFET configurations.

Application Areas

Power supplies

Motor drives

DC-DC converters

Automotive electronics

Product Lifecycle

Status: Active

No current indication of discontinuation, replacements, or upgrades.

Several Key Reasons to Choose This Product

High performance with fast rise and fall times optimal for rapid switching.

Dual independent channels provide design versatility.

High current and voltage capabilities support a wide range of power applications.

Robust design suitable for extreme environmental conditions.

Active product status with onsemi reliability ensures long-term application suitability.