Manufacturer Part Number
NCP81078MNTBG
Manufacturer
onsemi
Introduction
High-performance power management integrated circuit for gate driving applications.
Product Features and Performance
Independent half-bridge gate driver
Supports N-Channel MOSFET gates
Dual driver configuration
Non-inverting input type
Quick rise and fall times for efficient switching: 19ns / 17ns
High bootstrap voltage capacity up to 180V
Wide supply voltage range: 5.5V to 20V
Logic level thresholds for easy interfacing: VIL 0.8V, VIH 2V
Capable of delivering 1A peak source and 900mA sink current
Operating temperature range: -40°C to 140°C
Product Advantages
Compact 8-VFDFN exposed pad package for space-conscious designs
Suitable for high efficiency and high-density power conversion
Reliable operation in extended temperature ranges
Adequate current driving capabilities for robust gate driving
Key Technical Parameters
Supply Voltage: 5.5V ~ 20V
Logic Voltage VIL, VIH: 0.8V, 2V
Peak Output Current (Source, Sink): 1A, 900mA
High Side Voltage Max (Bootstrap): 180V
Rise / Fall Time (Typ): 19ns, 17ns
Quality and Safety Features
Built for reliable performance in stringent temperature environments
Compatibility
Designed to interface with N-Channel MOSFETs
Application Areas
Suitable for converting power in computer servers, telecom infrastructure, and industrial systems
Product Lifecycle
Product status is obsolete
Potential alternatives or replacements may be available
Several Key Reasons to Choose This Product
onsemi's reputation for quality and reliability in power management
Dual-channel configuration offers design flexibility
Optimized for fast switching to minimize power loss
Advanced protection features ensure long-term reliability
The part's obsolescence status suggests it may be an industry-proven solution with established design-in suitability