MMBF5462 - onsemi

Manufacturer Part Number

MMBF5462

Manufacturer

onsemi

Introduction

JFET P-Channel transistor utilized for signal amplification and switching applications.

Product Features and Performance

P-Channel for high input impedance and low leakage currents

Voltage - Breakdown (V(BR)GSS) of 40V

Current - Drain (Idss) of 4 mA @ 15V

Low Voltage - Cutoff (VGS off) at 1.8V for precision operation

Input Capacitance (Ciss) of 7pF @ 15V for effective signal handling

Power capacity of 225 mW

Operating Temperature range of -55°C to 150°C enhancing device robustness

Product Advantages

Efficient signal processing in compact TO-236-3 package

Extended operating temperature range suitable for harsh environments

Low power dissipation for energy-sensitive applications

Key Technical Parameters

FET Type: P-Channel

Breakdown Voltage: 40 V

Drain Current: 4 mA @ 15 V

Cutoff Voltage: 1.8 V @ 1 µA

Input Capacitance: 7pF @ 15V

Max Power: 225 mW

Operating Temperature: -55°C ~ 150°C

Quality and Safety Features

High-temperature operating capability ensuring reliability under thermal stress

Compliant with environmental and safety industry standards

Compatibility

Surface Mount compatible for diverse PCB designs

SOT-23-3 standard package suitable for automated assembly processes

Application Areas

Signal amplification in audio, sensor, and analog circuits

Switching applications in consumer and industrial electronics

Product Lifecycle

Obsolete status indicating production has ceased

Potential availability of replacement or upgrade alternatives

Reasons to Choose This Product

Superior thermal performance for a wide range of applications

Low leakage current enhancing circuit precision

Ease of integration into existing designs due to industry standard SOT-23-3 packaging

Suitable for critical audio, sensor, and high-fidelity applications due to high-impedance and low power design

Proven manufacturer with a history of reliable and quality semiconductor components