Manufacturer Part Number
MMBF5459
Manufacturer
onsemi
Introduction
N-Channel JFET for signal amplification and switching applications.
Product Features and Performance
N-Channel Transistor JFET
Voltage - Breakdown (V(BR)GSS) of 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 4 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 2 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Power - Max 350 mW
Operating Temperature range from -55°C to 150°C
Surface Mount device
Product Advantages
Designed for high-performance, low-power applications
Optimized for audio and signal processing
Compact SOT-23-3 package suits dense circuit layouts
Key Technical Parameters
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V
Current - Drain (Idss) 4 mA @ 15 V
Voltage - Cutoff (VGS off) 2 V @ 10 nA
Input Capacitance (Ciss) 7pF @ 15V
Max Power 350 mW
Operating Temperature -55 to 150°C
Mounting Type Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Quality and Safety Features
Complies with industry-standard specifications for safety
Stable operation in high temperature environments up to 150°C
Compatibility
Compatible with standard SOT-23-3 mounting and circuitry
Application Areas
Amplifiers
Switches
Audio equipment
Signal processing
Product Lifecycle
Obsolete
Availability of replacements or upgrades to be checked with manufacturer
Several Key Reasons to Choose This Product
Optimized for low noise and low signal amplification
Robust operating temperature range suitable for challenging environments
Compact form factor for space-constrained applications
Industry-standard packaging for easy integration into existing designs
Manufactured by onsemi, a reputable semiconductor company