MMBD354LT1G - onsemi

Manufacturer Part Number

MMBD354LT1G

Manufacturer

onsemi

Introduction

The MMBD354LT1G is a high-quality RF Schottky diode, designed by onsemi for high-frequency applications requiring high speed and low forward voltage drop.

Product Features and Performance

Comprises a Schottky diode pair with common cathode configuration

Optimal performance with a peak reverse voltage of 7V

Low capacitance of 1pF at 0V, 1MHz ensuring high-frequency operation

Maximum power dissipation of 225 mW

Capable of operating across a wide temperature range: -55°C to 150°C

Product Advantages

High-frequency operation with minimal signal distortion

Low forward voltage drop enhances system efficiency

Robust thermal performance contributes to reliability in varied environments

Compact SOT-23-3 package suitable for space-constrained applications

Key Technical Parameters

Diode Type: Schottky 1 Pair Common Cathode

Voltage Peak Reverse (Max): 7V

Capacitance @ Vr, F: 1pF

Power Dissipation (Max): 225 mW

Operating Temperature Range: -55°C ~ 150°C

Quality and Safety Features

Constructed to meet high-quality standards of onsemi

Long-term reliability across a broad operating temperature spectrum

Compatibility

Designed for use in high-frequency RF applications

Suitable for SOT-23-3 (TO-236) package compatible layouts

Application Areas

RF and microwave circuits

High-speed digital applications

Power management systems

Mobile and wireless technology

Product Lifecycle

Currently in active production with no immediate plans for discontinuation

Future upgrades or replacements will adhere to onsemi's commitment to innovation and reliability

Several Key Reasons to Choose This Product

Superior high-frequency performance with low capacitance

Exceptionally low forward voltage for efficient operation

Durable and reliable across extreme temperatures

Compact and versatile for a wide range of applications

Backed by onsemi's reputation for quality semiconductor solutions