MMBD352LT1G - onsemi

Manufacturer Part Number

MMBD352LT1G

Manufacturer

onsemi

Introduction

The MMBD352LT1G is a high-performance Schottky diode designed for RF and high-speed switching applications packaged in a compact SOT-23-3 format.

Product Features and Performance

Schottky diode with series pair connection

Low forward voltage drop

High switching speed

Low capacitance of 1pF @ 0V, 1MHz for superior high-frequency performance

Power dissipation capacity of 225 mW

Product Advantages

Compact SOT-23-3 package for space-sensitive applications

High temperature range from -55°C to 150°C allows for use in extreme environments

7V peak reverse voltage suitable for various electronic circuits

Tape and Reel packaging for automated assembly processes

Key Technical Parameters

Voltage - Peak Reverse (Max): 7V

Capacitance @ Vr, F: 1pF @ 0V, 1MHz

Power Dissipation (Max): 225 mW

Operating Temperature: -55°C ~ 150°C (TJ)

Package / Case: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Quality and Safety Features

Built to high-quality standards by onsemi

Reliable performance in a wide range of conditions

Compatibility

Compatibility with surface-mount technology

Fits in the standard SOT-23-3 footprint

Application Areas

RF circuits

High-speed switch mode power supplies

Clamping and protection circuits

Voltage regulation applications

Product Lifecycle

Active product status, not nearing discontinuation

Replacements or upgrades should be cross-referenced with onsemi's latest offerings

Several Key Reasons to Choose This Product

Optimized for radio frequency and fast-switching applications

Enhanced power handling capabilities for its small size

Low capacitance feature enabling better performance at high frequencies

High-temperature resilience for use in harsh environments

Versatile usage enabled by high peak reverse voltage

Produced by onsemi, a trusted manufacturer in semiconductor components