MMBD352WT1G - onsemi

Manufacturer Part Number

MMBD352WT1G

Manufacturer

onsemi

Introduction

The MMBD352WT1G is a Schottky diode designed for high-efficiency RF and microwave applications, packaged in a small SC-70, SOT-323 format for high-density mounting.

Product Features and Performance

Schottky diode with 1 Pair Series Connection

Low forward voltage drop

High-frequency operation

Peak Reverse Voltage: 7V

Low Capacitance: 1pF @ 0V, 1MHz

Maximum Power Dissipation: 200 mW

Operating Temperature Range: -55°C ~ 150°C

Product Advantages

High efficiency in RF applications

Compact SC-70, SOT-323 package suitable for dense circuit designs

Low power loss due to minimized forward voltage drop

Capable of operating in a wide temperature range

Key Technical Parameters

Voltage Peak Reverse (Max): 7V

Capacitance @ Vr, F: 1pF @ 0V, 1MHz

Power Dissipation (Max): 200 mW

Operating Temperature: -55°C ~ 150°C

Quality and Safety Features

Built to meet rigorous quality and safety standards

Designed for reliable performance in demanding conditions

Compatibility

Suitable for use in a wide range of RF and microwave applications

Compatible with high-density PCB mounting due to its small form factor

Application Areas

RF and microwave circuit designs

High-frequency signal detection

Energy harvesting applications

Wireless communication systems

Product Lifecycle

Status: Active

Currently not nearing discontinuation, with replacements or upgrades readily available

Several Key Reasons to Choose This Product

High-efficiency Schottky diode specifically designed for RF and microwave applications

Compact and versatile packaging suitable for dense circuit layouts

Broad operating temperature range facilitating use in various environmental conditions

Low capacitance and power loss optimizes system performance

Supported by onsemi's commitment to quality and durability