Manufacturer Part Number
MJ21196G
Manufacturer
onsemi
Introduction
High-power NPN bipolar junction transistor
Suitable for use in high-power switching and amplifier applications
Product Features and Performance
High collector-emitter voltage rating of 250V
High collector current rating of 16A
High power handling capability of 250W
High current gain of 25 (minimum) at 8A, 5V
High transition frequency of 4MHz
Product Advantages
Excellent power handling capability
High voltage and current ratings
High current gain
High switching speed
Key Technical Parameters
Collector-Emitter Breakdown Voltage (max): 250V
Collector Current (max): 16A
Collector Cutoff Current (max): 100A
VCE Saturation Voltage (max): 4V @ 3.2A, 16A
DC Current Gain (min): 25 @ 8A, 5V
Transition Frequency: 4MHz
Quality and Safety Features
RoHS3 compliant
TO-204 (TO-3) package for high power dissipation
Compatibility
Suitable for use in high-power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial control systems
Product Lifecycle
This product is currently in production and availability is good.
Several Key Reasons to Choose This Product
Excellent power handling capability up to 250W
High voltage and current ratings for demanding applications
High current gain and switching speed for efficient performance
Robust TO-204 (TO-3) package for reliable operation
RoHS3 compliance for environmental responsibility
MJ2501STMicroelectronicsTRANS PNP DARL 80V 10A TO3