Manufacturer Part Number
MJ21194G
Manufacturer
onsemi
Introduction
The MJ21194G is a high-power NPN bipolar junction transistor (BJT) designed for use in a variety of power electronics applications.
Product Features and Performance
High power handling capability up to 250W
High voltage rating of 250V collector-emitter breakdown voltage
High current rating of up to 16A collector current
High current gain (hFE) of 25 minimum at 8A collector current
High frequency performance with 4MHz transition frequency
Wide operating temperature range from -65°C to 200°C
Product Advantages
Excellent power handling and high voltage/current capabilities
Robust and reliable performance in harsh environments
Suitable for use in high-power switching and amplifier circuits
High frequency operation enables use in high-speed applications
Key Technical Parameters
Power Rating: 250W
Collector-Emitter Breakdown Voltage: 250V
Collector Current (Max): 16A
Collector Cutoff Current (Max): 100A
Vce Saturation Voltage: 4V @ 3.2A, 16A
DC Current Gain (hFE): 25 minimum @ 8A, 5V
Transition Frequency: 4MHz
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-204 (TO-3) package for robust and reliable operation
Through-hole mounting for secure and reliable installation
Compatibility
Compatible with a wide range of power electronics applications
Suitable for use in high-power switching, amplifier, and control circuits
Application Areas
Power supplies
Motor drives
Inverters and converters
Audio amplifiers
Industrial and automotive electronics
Product Lifecycle
Current production part, not nearing discontinuation
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Exceptional power handling and high voltage/current capabilities
Reliable and robust performance in harsh environments
Suitable for high-frequency and high-speed applications
RoHS3 compliance for environmental responsibility
Proven track record and technical support from onsemi
