Manufacturer Part Number
MJ21193G
Manufacturer
onsemi
Introduction
High-power PNP silicon transistor suitable for use in high-voltage, high-current switching applications.
Product Features and Performance
Power rating up to 250W
Collector-emitter voltage breakdown up to 250V
Collector current up to 16A
Collector cutoff current up to 100A
Transition frequency of 4MHz
Product Advantages
Robust and reliable design for high-power applications
Excellent thermal characteristics for efficient heat dissipation
Wide operating temperature range of -65°C to 200°C
Key Technical Parameters
Collector-emitter breakdown voltage: 250V
Collector current (max): 16A
Collector cutoff current (max): 100A
VCE saturation voltage: 4V @ 3.2A, 16A
DC current gain: 25 @ 8A, 5V
Transition frequency: 4MHz
Quality and Safety Features
RoHS3 compliant
Hermetically sealed TO-204 (TO-3) package for improved reliability and safety
Compatibility
Suitable for high-voltage, high-current switching applications in industrial, automotive, and power electronics systems
Application Areas
Power amplifiers
Servo motor controls
Relay drivers
Switching regulators
Welding equipment
Motor controls
Product Lifecycle
This product is an active and widely used component
Replacement or upgrade options are available from onsemi and other manufacturers
Key Reasons to Choose This Product
Reliable and robust design for high-power applications
Excellent thermal characteristics for efficient heat dissipation
Wide operating temperature range for versatile applications
RoHS3 compliance for environmentally-friendly usage
Availability of replacement and upgrade options
