Manufacturer Part Number
FQA32N20C
Manufacturer
onsemi
Introduction
High-power N-Channel MOSFET transistor
Product Features and Performance
Drain-to-source voltage up to 200V
Continuous drain current up to 32A at 25°C
On-resistance as low as 82mΩ
Wide operating temperature range of -55°C to 150°C
Fast switching speed
High power handling capability up to 204W
Product Advantages
Excellent thermal performance
High reliability and ruggedness
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 82mΩ @ 16A, 10V
Continuous Drain Current (Id): 32A @ 25°C
Input Capacitance (Ciss): 2220pF @ 25V
Power Dissipation (Ptot): 204W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-3P-3 package for efficient heat dissipation
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available
Key Reasons to Choose This Product
High power handling and efficiency
Excellent thermal management
Reliable and rugged design
Suitable for demanding high-power applications
Availability of replacement and upgrade options
