Manufacturer Part Number
FQA28N50
Manufacturer
onsemi
Introduction
High power N-Channel MOSFET
Product Features and Performance
High drain-source voltage up to 500 V
Low on-state resistance of 160 mΩ
High continuous drain current of 28.4 A
Wide operating temperature range of -55°C to 150°C
Fast switching and low gate charge of 140 nC
Optimized for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent power handling capability
Efficient power conversion with low losses
Reliable operation in harsh environments
Compact and easy to integrate design
Key Technical Parameters
Drain-Source Voltage (Vdss): 500 V
Gate-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 160 mΩ
Continuous Drain Current (Id): 28.4 A
Input Capacitance (Ciss): 5600 pF
Power Dissipation (Tc): 310 W
Quality and Safety Features
ROHS3 compliant
Sturdy TO-3P package for reliable performance
Compatibility
Through-hole mounting
Application Areas
High-power switching applications
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product
Replacement options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable operation in harsh environments
Compact and easy to integrate design
Proven performance in a wide range of high-power applications