FQA38N30 - onsemi

Manufacturer Part Number

FQA38N30

Manufacturer

onsemi

Introduction

High-performance N-channel power MOSFET with low on-resistance and high-speed switching capabilities.

Product Features and Performance

High drain-source breakdown voltage of 300V

Low on-resistance of 85mΩ at 19.2A drain current

High continuous drain current of 38.4A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching with low gate charge of 120nC at 10V

Product Advantages

Excellent power handling capability

Efficient power conversion and low power loss

Reliable operation in harsh environments

Suitable for a variety of high-power applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 300V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 85mΩ @ 19.2A, 10V

Continuous Drain Current (Id): 38.4A @ 25°C

Input Capacitance (Ciss): 4400pF @ 25V

Power Dissipation (Tc): 290W

Quality and Safety Features

RoHS3 compliant

Robust TO-3P package for reliable operation

Compatibility

Suitable for a wide range of power electronic applications, including motor drives, power supplies, and inverters.

Application Areas

Industrial equipment

Automotive electronics

Renewable energy systems

Power conversion and control

Product Lifecycle

This product is currently in production and widely available.

Replacements and upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable performance in harsh environments

Robust and compact package design

Compatibility with a wide range of power electronic applications

Ongoing product support and availability