Manufacturer Part Number
FJL6920TU
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN silicon power transistor
Product Features and Performance
800V collector-emitter breakdown voltage
200W power dissipation
20A collector current
150°C maximum junction temperature
High DC current gain of 5.5 (min.) at 11A, 5V
Product Advantages
Robust performance for high-power applications
High voltage and current handling capabilities
Suitable for use in demanding industrial and automotive environments
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 800V
Current Collector (Ic) (Max): 20A
Current Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Quality and Safety Features
RoHS3 compliant
TO-264-3 package for optimal thermal performance
Compatibility
Through-hole mounting
Application Areas
Industrial and automotive power electronics
Switching power supplies
Motor control
Inductive load switching
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Robust high-voltage, high-current performance
Suitable for demanding industrial and automotive applications
RoHS3 compliance for environmental considerations
Proven reliability and performance from a trusted manufacturer