FJL4315OTU - onsemi

Manufacturer Part Number

FJL4315OTU

Manufacturer

onsemi

Introduction

The FJL4315OTU is a discrete NPN bipolar junction transistor (BJT) manufactured by onsemi.

Product Features and Performance

High power handling capability up to 150 W

Collector-Emitter Breakdown Voltage of 250 V

Collector Current (max) of 17 A

Collector Cutoff Current (max) of 5 A

Low Collector-Emitter Saturation Voltage of 3 V at 800 mA, 8 A

DC Current Gain (hFE) of 80 min at 1 A, 5 V

Transition Frequency of 30 MHz

Product Advantages

Excellent power handling capacity

High breakdown voltage for improved reliability

High current capability

Low saturation voltage for efficient power conversion

Suitable for a wide range of power switching and amplification applications

Key Technical Parameters

Power Rating: 150 W

Collector-Emitter Breakdown Voltage: 250 V

Collector Current (max): 17 A

Collector Cutoff Current (max): 5 A

Collector-Emitter Saturation Voltage: 3 V @ 800 mA, 8 A

DC Current Gain (hFE): 80 min @ 1 A, 5 V

Transition Frequency: 30 MHz

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Through-hole mounting in TO-264-3 or TO-264AA packages

Application Areas

Power switching and amplification circuits

Industrial and automotive power electronics

Switching power supplies

Motor drives

Welding equipment

Lighting ballasts

Product Lifecycle

Currently in active production

No known plans for discontinuation

Key Reasons to Choose This Product

Exceptional power handling capability up to 150 W

High breakdown voltage for improved reliability in high voltage applications

High current carrying capacity up to 17 A

Low saturation voltage for efficient power conversion

Wide operating temperature range of -50°C to 150°C

Suitable for a variety of power electronics and industrial applications

Manufactured by a trusted semiconductor supplier, onsemi