Manufacturer Part Number
FJL4315OTU
Manufacturer
onsemi
Introduction
The FJL4315OTU is a discrete NPN bipolar junction transistor (BJT) manufactured by onsemi.
Product Features and Performance
High power handling capability up to 150 W
Collector-Emitter Breakdown Voltage of 250 V
Collector Current (max) of 17 A
Collector Cutoff Current (max) of 5 A
Low Collector-Emitter Saturation Voltage of 3 V at 800 mA, 8 A
DC Current Gain (hFE) of 80 min at 1 A, 5 V
Transition Frequency of 30 MHz
Product Advantages
Excellent power handling capacity
High breakdown voltage for improved reliability
High current capability
Low saturation voltage for efficient power conversion
Suitable for a wide range of power switching and amplification applications
Key Technical Parameters
Power Rating: 150 W
Collector-Emitter Breakdown Voltage: 250 V
Collector Current (max): 17 A
Collector Cutoff Current (max): 5 A
Collector-Emitter Saturation Voltage: 3 V @ 800 mA, 8 A
DC Current Gain (hFE): 80 min @ 1 A, 5 V
Transition Frequency: 30 MHz
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in TO-264-3 or TO-264AA packages
Application Areas
Power switching and amplification circuits
Industrial and automotive power electronics
Switching power supplies
Motor drives
Welding equipment
Lighting ballasts
Product Lifecycle
Currently in active production
No known plans for discontinuation
Key Reasons to Choose This Product
Exceptional power handling capability up to 150 W
High breakdown voltage for improved reliability in high voltage applications
High current carrying capacity up to 17 A
Low saturation voltage for efficient power conversion
Wide operating temperature range of -50°C to 150°C
Suitable for a variety of power electronics and industrial applications
Manufactured by a trusted semiconductor supplier, onsemi