Manufacturer Part Number
FDS86242
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET in a compact 8-SOIC package.
Product Features and Performance
150V drain-to-source voltage
67mΩ maximum on-resistance at 4.1A and 10V gate-to-source voltage
1A continuous drain current at 25°C
760pF maximum input capacitance at 75V drain-to-source voltage
5W maximum power dissipation at 25°C ambient temperature, 5W at 25°C case temperature
Product Advantages
Compact 8-SOIC package
High efficiency and low power loss
Suitable for a wide range of power management and control applications
Key Technical Parameters
N-channel MOSFET
±20V maximum gate-to-source voltage
4V maximum gate threshold voltage at 250μA drain current
6V to 10V drive voltage range for optimal on-resistance
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C junction temperature
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power management circuits
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
Current production
No information on discontinued or replacement models
Several Key Reasons to Choose This Product
High-performance power MOSFET with low on-resistance and high current capability
Compact 8-SOIC package for space-constrained designs
Wide temperature range operation
RoHS3 compliance for environmentally-friendly applications