Manufacturer Part Number
FDS86267P
Manufacturer
onsemi
Introduction
The FDS86267P is a P-channel MOSFET transistor in the PowerTrench series, designed for a wide range of power management and switching applications.
Product Features and Performance
High voltage rating up to 150V
Low on-resistance of 255mΩ @ 2.2A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching performance with low gate charge of 16nC @ 10V
Product Advantages
Efficient power management due to low on-resistance
Reliable operation in high temperature environments
Compact surface mount package for space-constrained designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate to Source Voltage (Vgs): ±25V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 1130pF @ 75V
Power Dissipation (Max): 1W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for surface mount assembly
Compatible with standard 8-SOIC package
Application Areas
Power supplies
Motor drives
Switching regulators
General power management circuits
Product Lifecycle
Current production part
Availability of replacement or upgrade parts
Key Reasons to Choose
Excellent power efficiency with low on-resistance
Reliable operation in high temperature environments
Compact surface mount package for space-constrained designs
Suitable for a wide range of power management applications