Manufacturer Part Number
FDS86140
Manufacturer
onsemi
Introduction
N-channel power MOSFET in a PowerTrench® package
Product Features and Performance
Drain-source voltage (Vdss) of 100V
On-resistance (Rds(on)) of 9.8mΩ at 11.2A, 10V
Continuous drain current (Id) of 11.2A at 25°C
Input capacitance (Ciss) of 2580pF at 50V
Power dissipation of 2.5W at 25°C and 5W at the case temperature
Product Advantages
Low on-resistance for high efficiency
High current capability
Suitable for a wide range of applications
Key Technical Parameters
N-channel MOSFET
±20V gate-source voltage (Vgs)
4V threshold voltage (Vgs(th)) at 250μA
41nC gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range of -55°C to 150°C
Compatibility
Surface mount 8-SOIC package
Application Areas
Power conversion circuits
Motor drives
Switching regulators
Lighting and industrial controls
Product Lifecycle
Currently available
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current capability
Suitable for a wide range of applications
Compact 8-SOIC surface mount package
Operating temperature range of -55°C to 150°C
RoHS3 compliant