FDG8842CZ - onsemi

Manufacturer Part Number

FDG8842CZ

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor product, specifically a transistor in the form of an Nand P-channel MOSFET array.

Product Features and Performance

Utilizes PowerTrench technology

Operates at a wide temperature range of -55°C to 150°C

Supports a maximum power dissipation of 300mW

Offers a drain-to-source voltage (Vdss) of 30V and 25V

Provides a maximum on-resistance (Rds(on)) of 400mΩ at 750mA and 4.5V

Features a maximum input capacitance (Ciss) of 120pF at 10V

Includes a logic-level gate with a maximum gate threshold voltage (Vgs(th)) of 1.5V at 250μA

Delivers a maximum gate charge (Qg) of 1.44nC at 4.5V

Product Advantages

Wide operating temperature range

Low on-resistance for efficient power handling

Logic-level gate for easy control

Key Technical Parameters

N and P-channel MOSFET configuration

30V and 25V drain-to-source voltage

400mΩ maximum on-resistance

120pF maximum input capacitance

5V maximum gate threshold voltage

44nC maximum gate charge

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount packaging (6-TSSOP, SC-88, SOT-363)

Application Areas

Suitable for various power management and control applications, such as power supplies, motor controls, and switches.

Product Lifecycle

This product is currently in production and available for purchase.

Several Key Reasons to Choose This Product

Wide operating temperature range for diverse applications

Low on-resistance for efficient power handling

Logic-level gate for easy control and integration

Compact surface mount packaging for space-constrained designs

RoHS3 compliance for environmentally-friendly applications